• DocumentCode
    1135792
  • Title

    DC-Voltage-induced thermal shift of bias point in LiNbO3 optical Modulators

  • Author

    Nagata, Hirotoshi ; O´Brien, N.F. ; Bosenberg, W.R. ; Reiff, G.L. ; Voisine, K.R.

  • Author_Institution
    JDS Uniphase Corp., Bloomfield, CT, USA
  • Volume
    16
  • Issue
    11
  • fYear
    2004
  • Firstpage
    2460
  • Lastpage
    2462
  • Abstract
    Increasing thermal shift of a bias point is observed when dc voltage is applied to z-cut LiNbO3 (LN) modulators having asymmetric design; whereas, stable thermal shift is observed in symmetric x-cut LN modulators. A growth of the thermal shift depends upon the amplitude, polarity, and duration of the applied voltage and constitutes a new criterion to reliability modeling of LN modulators.
  • Keywords
    electro-optical modulation; lithium compounds; optical materials; reliability; DC voltage; LiNbO3; LiNbO3 modulators; assymetric design; bias point; optical modulators; reliability modeling; symmetric modulators; thermal shift; z-cut LiNbO3; Conducting materials; Dielectric materials; Electrodes; Optical buffering; Optical design; Optical modulation; Phase modulation; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2004.834928
  • Filename
    1344067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1135792