DocumentCode :
1135853
Title :
GaInAsP semiconductor laser amplifiers for single-mode fiber communications
Author :
Simon, J.C.
Author_Institution :
Centre National d´´Etudes des Telecommunications, Lannion, France
Volume :
5
Issue :
9
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
1286
Lastpage :
1295
Abstract :
Gain, polarization sensitivity, saturation power, and noise characteristics of quaternary semiconductor laser amplifiers of the Fabry-Perot (FP) and traveling-wave (TW) types are reviewed. The status of antireflection coatings for TW amplifiers is presented. New results concerning the polarization sensitivity and output saturation power of a 1.5-μm buried-heterostructure (BH) amplifier are reported. A theoretical model is presented concerning the influence of the waveguide structure on the maximum internal gain of a CW-operating 1.5- μm BH amplifier, including thermal effects, and a comparison of this model with recent experimental results is reported. The influence of nonresonant losses on the noise factor of 1.5-μm amplifiers is discussed.
Keywords :
Bibliographies; Fabry - Perot resonators; Gallium materials/lasers; Laser amplifiers; Optical fiber communication; Traveling wave amplifiers; Fiber lasers; Laser modes; Laser noise; Laser theory; Optical fiber communication; Optical fiber polarization; Power amplifiers; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1987.1075637
Filename :
1075637
Link To Document :
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