Title :
Currents and charge profiles in electron beam irradiated samples under an applied voltage: exact numerical calculation and Sessler´s conductivity approximation
Author :
Ferreira, G.F.Leal ; de Figueiredo, M.T.
Author_Institution :
Inst. de Fisica de Sao Carlos, Univ. de Sao Paulo, Sao Carlos, Brazil
Abstract :
In this paper the Sessler´s treatment (ST) for radiation induced conductivity in open circuit, in which the material under electron beam irradiation is supposed to acquire a conductivity and to accumulate mobile as well as trapped charges, is applied to the case of irradiation under a voltage. We show that ST is an approximation of a more complex treatment where the generation-recombination process is explicitly considered while allowing a single species to move. ST leads to good results for the back electrode current and for charge profiles if the electric field is so directed as to drive the mobile charges into the sample bulk. In general, trapping causes the agreement to be worse. An implicit finite difference scheme was employed in the numerical integration to ensure greater accuracy.
Keywords :
EBIC; electric charge; electron traps; electron-hole recombination; finite difference methods; hole traps; integration; Sessler´s conductivity approximation; Sessler´s treatment; back electrode current; charge profiles; conductivity; currents; electron beam irradiated samples; exact numerical calculation; generation-recombination process; implicit finite difference scheme; mobile charge; numerical integration; radiation induced conductivity; trapped charge; Circuits; Conductivity; Electrodes; Electron beams; Electron traps; Optical pulse generation; Pulse modulation; Pulsed electroacoustic methods; Spontaneous emission; Voltage;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
DOI :
10.1109/TDEI.2003.1176577