Title :
2 GHz controllable power amplifier in standard CMOS process for short-range wireless applications
Author :
Hella, M.M. ; Ismail, Mahamod
Author_Institution :
Analog VLSI Lab., Ohio State Univ., Columbus, OH, USA
Abstract :
The authors present the design and implementation of a broadband radiofrequency power amplifier in a standard CMOS technology for short-range wireless applications. The amplifier is implemented in a standard 0.35 μm triple metal CMOS process. The amplifier is capable of delivering a maximum output power of 16.6 dBm at 1.91 GHz, and of 16 dBm at 2 GHz using a 3.3 V supply with an overall measured power added efficiency (PAE) of 33%. The power amplifier employs a class AB output stage, which represents a compromise between efficiency and linearity. The level of output power can be controlled in 2 dB steps using a number of parallel semi-cascode stages.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; radio equipment; wideband amplifiers; 0.35 micron; 2 GHz; 3.3 V; 33 percent; CMOS process; broadband radiofrequency power amplifier; class AB output stage; linearity; output power; parallel semi-cascode stages; power added efficiency; short-range wireless communication;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20020555
