مرکز منطقه ای اطلاع رساني علوم و فناوري - Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In<formula formulatype="inline"> <img src="/images/tex/18838.gif" alt="_{0.08}"> </formula>Ga<formula formulatype="inline"> <img src="/images/tex/18839.gif" alt="

DocumentCode :

1136082

Title :

Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In $_{0.08}$ Ga $_{0.92}$ N Shallow Ste

Author :

Kuo, Cheng-Huang ; Fu, Y.K. ; Yeh, C.L. ; Tun, C.J. ; Chen, P.H. ; Lai, Wei-Chih ; Chang, Shoou-Jinn

Author_Institution :

Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli

Volume :

Issue :

fYear :

2009

fDate :

3/15/2009 12:00:00 AM

Firstpage :

371

Lastpage :

373

Abstract :

A nitride-based asymmetric two-step light-emitting diode (LED) with In_0.08 Ga_0.92N shallow step was proposed and fabricated. It was found that the low indium content In_0.08 Ga_0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In_0.27Ga_0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In_0.08 Ga_0.92N shallow step.

Keywords :

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; phase separation; wide band gap semiconductors; InGaN-GaN; light-emitting diodes; phase separation; single quantum well; InGaN–GaN; light-emitting diode (LED); low indium composition; single-quantum-well (SQW);

fLanguage :

English

Journal_Title :

Photonics Technology Letters, IEEE

Publisher :

ieee

ISSN :

1041-1135

Type :

jour

DOI :

10.1109/LPT.2008.2012118

Filename :

4770213

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1136082