DocumentCode
1136130
Title
Bismuth-doped Pb1-x Snx Te diode lasers with low-threshold currents
Author
Butler, J. ; Harman, Todd
Author_Institution
Lincoln Lab., Massachusetts Institute of Technology, Mass.
Volume
5
Issue
1
fYear
1969
fDate
1/1/1969 12:00:00 AM
Firstpage
50
Lastpage
51
Abstract
Diode lasers have been fabricated from Bi-doped Pb1-x Snx Te with 
, which have threshold current densities as low as 1400 A.cm-2at 77°K and 71 A.cm-2at 12°K, whereas diodes fabricated from undoped Pb1-x Snx Te> in this composition range did not exhibit laser action for current densities up to 30 000 A.cm-2at 77°K and had threshold current densities greater than 200 A.cm-2at 12°K. Bi doping also results in a reduction in the annealing times required to form suitable 
junctions from several weeks to a few days. These effects can be tentatively related to an increased electron concentration in the 
-type layer due to the addition of Bi, a donor impurity. A curve of 
versus 
for 
, which agrees with predictions, is presented.
, which have threshold current densities as low as 1400 A.cm-2at 77°K and 71 A.cm-2at 12°K, whereas diodes fabricated from undoped Pb junctions from several weeks to a few days. These effects can be tentatively related to an increased electron concentration in the -type layer due to the addition of Bi, a donor impurity. A curve of versus for , which agrees with predictions, is presented.Keywords
Annealing; Bismuth; Current density; Diode lasers; Doping; Electrons; P-n junctions; Tellurium; Threshold current; Tin;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1969.1075663
Filename
1075663
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