Title :
High-speed Germanium-on-SOI lateral PIN photodiodes
Author :
Dehlinger, G. ; Koester, S.J. ; Schaub, J.D. ; Chu, J.O. ; Ouyang, Q.C. ; Grill, A.
Author_Institution :
Infineon Technologie, Villach, Austria
Abstract :
We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 ×10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a -3-dB bandwidth of 29 GHz (27 GHz) at a bias voltage of -1 V. The detectors with S=0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at -1-V bias.
Keywords :
dark conductivity; elemental semiconductors; germanium; p-i-n photodiodes; photodetectors; silicon-on-insulator; -1 V; 0.02 muA; 10 mum; 27 GHz; 29 GHz; 34 percent; 46 percent; 850 nm; 900 nm; Ge; dark current; finger spacing; germanium-on-SOI lateral PIN photodiodes; quantum efficiency; Bandwidth; Dark current; Detectors; Fabrication; Fingers; Germanium; PIN photodiodes; Photodetectors; Silicon on insulator technology; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.835631
