Investigation of new narrow-bandwidth a-Si:H photodetector

Author

Shin, N.-F. ; Hong, J.-W. ; Wu, Y.-F. ; Jen, T.-S. ; Chang, C.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

141

Issue

3

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

150

Lastpage

156

Abstract

A narrow-bandwidth hydrogenated amorphous silicon (a-Si:H) photodetector with a basic structure of Al/n⁺-i-p⁺-i-n-i-p-i-n⁺/ITO/glass has been investigated. The spectral response of this new photodetector was found to be affected by the absorption coefficient of a-Si:H material, surface recombination current, device layer thicknesses, and applied bias. The spectral response of this device reveals a measured minimum FWHM of 58 nm at zero volt bias. The peak wavelength in the visible spectrum can be shifted from 400 nm (purple) to 550 nm (green) by decreasing the bias voltage from 5 to 0 V. The optoelectronic characteristics of this photodetector fit theoretically using suitable quantitative estimates

Keywords

amorphous semiconductors; hydrogen; photodetectors; photodiodes; silicon; 400 to 550 nm; 5 to 0 V; Al; Al/n⁺-i-p⁺-i-n-i-p-i-n⁺/ITO/glass; ITO; InSnO; Si:H; a-Si:H photodetector; absorption coefficient; applied bias; device layer thicknesses; hydrogenated amorphous silicon; measured minimum FWHM; narrow-bandwidth; optoelectronic characteristics; peak wavelength; spectral response; surface recombination current; zero volt bias;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19949800

Filename

305892