• DocumentCode
    1136702
  • Title

    Laterally intermixed quantum structure for carrier confinement in vertical-cavity surface-emitting lasers

  • Author

    Sugawara, Yoko ; Miyamoto, Takahiro

  • Author_Institution
    Precision & Intell. Lab., Tokyo Inst. of Technol., Yokohama
  • Volume
    45
  • Issue
    3
  • fYear
    2009
  • Firstpage
    167
  • Lastpage
    168
  • Abstract
    A quantum structure intermixing from the lateral direction of the mesa sidewall is proposed as an improvement method of the performance of vertical-cavity surface-emitting lasers (VCSELs). Threshold current reduction of 70%, a differential quantum efficiency increase of 75% and a two times increase in output power were achieved by suppression of the surface recombination current and by the carrier confinement in the post-type VCSEL.
  • Keywords
    carrier lifetime; surface emitting lasers; surface recombination; VCSEL; carrier confinement; carrier diffusion; differential quantum efficiency; quantum structure intermixing; surface recombination current; threshold current; vertical-cavity surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20093587
  • Filename
    4770460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1136702