Laterally intermixed quantum structure for carrier confinement in vertical-cavity surface-emitting lasers

A quantum structure intermixing from the lateral direction of the mesa sidewall is proposed as an improvement method of the performance of vertical-cavity surface-emitting lasers (VCSELs). Threshold current reduction of 70%, a differential quantum efficiency increase of 75% and a two times increase in output power were achieved by suppression of the surface recombination current and by the carrier confinement in the post-type VCSEL.