DocumentCode
113672
Title
Implementation of power semiconductor aging behavior in an electric vehicle powertrain model
Author
Ottl, Markus ; Schmitt, Timothy ; Schneider, R.
Author_Institution
Res. Center for Mechatron., Univ. of Appl. Sci., Dornbirn, Austria
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
1
Lastpage
6
Abstract
Thermal stress in power semiconductor modules causes mechanical wear effects, which eventually lead to failure. A common approach to estimate the time to failure is to utilize power cycling tests. The results of these tests can not directly be transferred to real-life applications. In this paper, we propose a way to implement an on-line lifetime estimation in a dynamic electric vehicle simulation model. Results from power cycling tests are combined with simulation results of the application dependent temperature characteristics. They are processed using rainflow counting and Palmgren-Miners rule in order to calculate the progression of lifetime on-line. This information is fed back into the semiconductor simulation model.
Keywords
electric vehicles; power semiconductor devices; power transmission (mechanical); thermal stresses; Palmgren-Miners rule; dynamic electric vehicle simulation model; electric vehicle powertrain model; mechanical wear effects; on-line lifetime estimation; power cycling tests; power semiconductor aging; power semiconductor modules; rainflow counting; semiconductor simulation model; thermal stress; Estimation; Junctions; Load modeling; Mathematical model; Semiconductor device modeling; Stress; Wires; IGBT; inverter; lifetime modelling; power semiconductors; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Research and Education in Mechatronics (REM), 2014 15th International Workshop on
Conference_Location
El Gouna
Type
conf
DOI
10.1109/REM.2014.6920232
Filename
6920232
Link To Document