DocumentCode :
1136899
Title :
Simulations on an SOI grating-based optical add/drop multiplexer
Author :
Tsao, Shyh-Lin ; Tien, Jiang-Hung ; Tsai, Chun-Wei
Author_Institution :
Opt. Fiber Syst. Lab., Nat. Taiwan Normal Univ., Taiwan
Volume :
8
Issue :
6
fYear :
2002
Firstpage :
1277
Lastpage :
1284
Abstract :
With a suitable design of a silicon-on-insulator (SOI) grating in an optical add/drop multiplexer (OADM), a wavelength-selectable OADM is described. We study the characteristics of the designed SOI OADM and simulate the relationship of the electron and hole concentrations including the temperature effect by using integrated system engineering-technology computer aided design. The voltages for the light wavelength switching are evaluated and are best set below Vp=0.8 V and above Vn=-0.8 V for OADM operation. The light propagation and spectral response are also illustrated in finite-difference time-domain beam propagation method (FDTD-BPM) simulations.
Keywords :
SIMOX; diffraction gratings; electro-optical switches; electron density; finite difference time-domain analysis; hole density; multiplexing equipment; optical communication equipment; optical design techniques; optical engineering computing; wavelength division multiplexing; SIMOX wafer; SOI grating-based optical add/drop multiplexer; SOI multimode-interference waveguide; Si-SiO2; design; electron concentrations; finite-difference time-domain beam propagation method simulations; grating switch; hole concentrations; integrated system engineering-technology computer aided design; light propagation; light wavelength switching; silicon-on-insulator grating; simulations; spectral response; temperature effect; voltages; wavelength-selectable OADM; Add-drop multiplexers; Charge carrier processes; Computational modeling; Computer simulation; Electron optics; Gratings; Optical add-drop multiplexers; Optical design; Optical propagation; Silicon on insulator technology;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2002.806685
Filename :
1176670
Link To Document :
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