Title :
A technique for the preparation of low-threshold room-temperature GaAs laser diode structures
Author :
Panish, M. ; Hayashi, Isao ; Sumski, S.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
fDate :
4/1/1969 12:00:00 AM
Keywords :
Cooling; Diode lasers; Epitaxial layers; Furnaces; Gallium arsenide; Lattices; P-n junctions; Substrates; Temperature; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1969.1075757
