Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEICs and modules

Author

Bach, Heinz-Gunter ; Beling, Andreas ; Mekonnen, G.G. ; Schlaak, Wolfgang

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentechnik Berlin GmbH, Germany

Volume

8

Issue

6

fYear

2002

Firstpage

1445

Lastpage

1450

Abstract

An InP-based photoreceiver comprising a waveguide-integrated photodiode and a traveling-wave amplifier is presented, which allows dc-coupled interfacing to subsequent electronics without a bias-T. Getting rid of the bias-T provides cost savings of the receiver operation and improves the available bandwidth, gain, and gain flatness. The redesigned receiver optoelectronic integrated circuit was fully packaged into a pigtailed module with a coaxial 1.85-mm connector. Its optoelectronic conversion capability for nonreturn-to-zero modulated data rates up to 66 Gb/s is shown.

Keywords

III-V semiconductors; indium compounds; integrated circuit packaging; integrated optoelectronics; modules; optical receivers; photodiodes; travelling wave amplifiers; 1.85 mm; 60 Gbit/s; InP; InP-based monolithic photoreceiver OEICs; bias-T; dc-coupled interfacing; electronics; fully packaged; gain flatness; modules; nonreturn-to-zero modulated data rates; optical design; optical fabrication; optoelectronic conversion capability; pigtailed module; receiver operation; receiver optoelectronic integrated circuit; traveling-wave amplifier; waveguide-integrated photodiode; Bit rate; Costs; Epitaxial growth; Epitaxial layers; Fabrication; MMICs; Optical amplifiers; Optical waveguides; Optoelectronic devices; Photodiodes;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2002.806713

Filename

1176691