Watt-level mm-wave digital polar transmitters using switching power amplifiers in SiGe HBT

Author

Hashemi, Hossein ; Datta, Kunal

Author_Institution

Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

fYear

2014

fDate

15-17 Dec. 2014

Firstpage

61

Lastpage

64

Abstract

A Watt-level mm-wave digital polar transmitter (DPT) architecture, supporting high speed complex modulation schemes with high average efficiency, implemented in a SiGe HBT process is discussed in this paper. Design and implementation details of several blocks used in this digital polar transmitter including high power, high efficiency mm-wave Class-E power amplifiers and high speed modulators are presented. Performance trade-offs of a Watt-level mm-wave digital polar transmitter implemented in SiGe HBT BiCMOS process vis-a-vis a CMOS SOI implementation is also discussed.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave power amplifiers; modulators; radio transmitters; silicon-on-insulator; CMOS SOI implementation; DPT architecture; SiGe; SiGe HBT BiCMOS process; SiGe HBT process; high power high efficiency mm-wave class-E power amplifiers; high speed complex modulation schemes; high speed modulators; switching power amplifiers; watt-level mm-wave digital polar transmitter architecture; CMOS integrated circuits; Heterojunction bipolar transistors; Modulation; Power generation; Silicon germanium; Switches; Transmitters; BVCEO; Power Amplifier (PA); Q-band; Silicon Germanium (SiGe) HBT; class-E; millimeter-wave; modulation; polar; transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and RF Conference (IMaRC), 2014 IEEE International

Conference_Location

Bangalore

Type

conf

DOI

10.1109/IMaRC.2014.7038970

Filename

7038970