Precision frequency trimming of SAW and STW resonators using Xe/sup +/ heavy ion bombardment

Author

Aliev, Vladimir Shakirovich ; Avramov, Ivan D.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

Volume

41

Issue

5

fYear

1994

Firstpage

694

Lastpage

698

Abstract

A method for precision frequency trimming of surface acoustic wave (SAW) and surface transverse wave (STW) based resonant devices using a Xe/sup +/ heavy ion bombardment technique is described. The devices are downtrimmed in frequency in an in-situ monitoring process by means of a Kaufmann type ion source that allows first a rough and then a fine frequency trimming with an accuracy of 1 ppm in a single continuous in-situ monitoring process. An improvement of the device insertion loss and unloaded Q as a result of the trimming process is achieved. Single mode 776 MHz STW resonators can be downtrimmed by more than 5000 ppm without deteriorating their parameters while SAW resonators allow a much lower frequency downshift. The method is simple and can cost effectively be applied to SAW and STW device fabrication.<>

Keywords

Q-factor; acoustic resonators; ion beam effects; losses; surface acoustic wave devices; 776 MHz; Kaufmann type ion source; SAW resonators; STW resonators; Xe; Xe/sup +/ heavy ion bombardment; device fabrication; frequency downshift; in-situ monitoring; insertion loss; precision frequency trimming; single mode resonators; surface acoustic wave; surface transverse wave; unloaded Q; Acoustic waves; Frequency; Insertion loss; Ion sources; Monitoring; Resonance; Rough surfaces; Surface acoustic wave devices; Surface acoustic waves; Surface roughness;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.308505

Filename

308505