Title :
Millimeter-wave silicon-on-glass integrated technology
Author :
Ranjkesh, N. ; Taeb, A. ; Abdellatif, A. ; Gigoyan, S. ; Basha, M. ; Safavi-Naeini, S.
Abstract :
A new Silicon-on-Glass (SOG) technology for millimeter-wave (mmW) /Terahertz (THz) integrated circuits is presented. The main characteristics and advantages of the proposed technology are discussed and compared with the state of the art. Novel mmW high-performance phase shifter and 3-dB in-phase power divider, implemented in the proposed low-loss and low-cost integrated technology platform, are presented. The total average loss of the divider is less than 0.4 dB over 150-220 GHz band. The phase shifter produces a large phase shift of 82° (measured) and an insertion loss variation of less than 0.8 dB at 110 GHz.
Keywords :
millimetre wave integrated circuits; millimetre wave phase shifters; power dividers; SOG technology; frequency 150 GHz to 220 GHz; in-phase power divider; insertion loss variation; low-cost integrated technology platform; low-loss integrated technology platform; millimeter-wave integrated circuits; millimeter-wave silicon-on-glass integrated technology; mmW high-performance phase shifter; mmW-Terahertz THz integrated circuits; terahertz integrated circuits; total average divider loss; Dielectrics; Insertion loss; Integrated circuits; Optical waveguides; Phase shifters; Power dividers; Silicon; Silicon-on-Glass; THz technology; integrated circuit; millimeter-wave;
Conference_Titel :
Microwave and RF Conference (IMaRC), 2014 IEEE International
Conference_Location :
Bangalore
DOI :
10.1109/IMaRC.2014.7039015
