• DocumentCode
    1138863
  • Title

    Study of N-Channel MOSFETs With an Enclosed-Gate Layout in a 0.18 \\mu m CMOS Technology

  • Author

    Chen, Li ; Gingrich, Douglas M.

  • Volume
    52
  • Issue
    4
  • fYear
    2005
  • Firstpage
    861
  • Lastpage
    867
  • Abstract
    Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 \\mu m complementary metal–oxide-semiconductor technology. The static, small signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.
  • Keywords
    CMOS integrated circuits; MOSFET; ionisation chambers; CMOS technology; N-channel MOSFET; complementary metal-oxide-semiconductor technology; deep submicrometer; enclosed-gate layout; ionizing radiation; low-noise radiation-tolerant circuits; transistor design; CMOS process; CMOS technology; Geometry; Integrated circuit technology; Ionizing radiation; Leakage current; MOSFETs; Semiconductor device manufacture; Semiconductor device noise; Threshold voltage; Complementary metal–oxide-semiconductor (CMOS); deep submicrometer (DSM); enclosed-gate; radiation; transistor;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.852652
  • Filename
    1495775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1138863