Title :
Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection
Author :
Shoji, H. ; Mukai, K. ; Ohtsuka, N. ; Sugawara, M. ; Uchida, T. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A laser oscillation from self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots is achieved at 80 K by current injection. Lasing at a three-dimensionally quantum confined sublevel of the In/sub 0.5/Ga/sub 0.5/As quantum dots is clearly demonstrated for the first time by electroluminescence and diamagnetic energy shift measurement. The results predict the possibility of ultra-low threshold current operation of quantum dot lasers.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; quantum well lasers; self-adjusting systems; 80 K; In/sub 0.5/Ga/sub 0.5/As; In/sub 0.5/Ga/sub 0.5/As quantum dot lasers; current injection; diamagnetic energy shift measurement; electroluminescence; laser oscillation; self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots; three-dimensionally quantum confined sublevel of t; three-dimensionally quantum-confined sublevel; ultra-low threshold current operation; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Potential well; Quantum dot lasers; Quantum dots; Semiconductor lasers; Substrates; Threshold current; US Department of Transportation;
Journal_Title :
Photonics Technology Letters, IEEE
