Title :
Low-threshold native-oxide confined narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers
Author :
Yong Cheng ; Gye Mo Yang ; MacDougal, M.H. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers are demonstrated, AlAs native-oxide layers above and below waveguide region are employed for current and optical confinement to form narrow-stripe InGaAs-GaAs quantum-well lasers. A low-temperature (400/spl deg/C) selective wet-oxidation technique and an ion-beam-etching technique are used to fabricate insulator confined narrow-stripes and internal 45/spl deg/ deflectors, respectively. Continuous-wave threshold currents as low as 4.5 mA and 59% surface-emitting quantum efficiencies are achieved on the devices with 2-μm-wide aperture and a 420-μm-long cavity.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; ion beam effects; laser cavity resonators; optical fabrication; oxidation; quantum well lasers; surface emitting lasers; waveguide lasers; 2 mum; 4.5 mA; 400 C; 420 mum; 59 percent; InGaAs-GaAs; continuous-wave threshold currents; insulator confined narrow-stripes; internal 45/spl deg/ deflectors; ion-beam-etching technique; long cavity; low-temperature; low-threshold; narrow-stripe InGaAs-GaAs quantum-well lasers; narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers; native-oxide confined; optical confinement; selective wet-oxidation technique; surface-emitting quantum efficiencies; waveguide region; wide aperture; Apertures; Etching; Gallium arsenide; Optical surface waves; Optical waveguides; Oxidation; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
