Title :
Molecular beam epitaxy-grown separate confinement buried heterostructure PbEuSeTe-PbTe diode lasers
Author :
Feit, Z. ; Kostyk, D. ; Woods, R.J. ; Mak, P.
Author_Institution :
Laser Photonics Anal. Div., Andover, MA, USA
Abstract :
Separate confinement buried heterostructure (SCBH) tunable PbEuSeTe-PbTe diode lasers were fabricated by molecular beam epitaxy for the first time. Continuous wave (CW) operating temperature of 215 K was realized, which is the highest CW operating temperature ever reported for lead-chalcogenide diode lasers. Preliminary results show a significant improvement in threshold current and emission power. Exceptionally low threshold currents of 2.5 mA at 120 K, 76 mA at 180 K, and 252 mA at 200 K were measured. The temperature tuning range of the SCBH diode laser spans between 6.49 μm at 20 K to 4.19 μm at 215 K.
Keywords :
II-VI semiconductors; chalcogenide glasses; europium compounds; laser tuning; lead compounds; molecular beam epitaxial growth; optical fabrication; semiconductor growth; semiconductor lasers; 120 K; 180 K; 2.5 mA; 20 to 215 K; 200 K; 215 K; 252 mA; 6.49 to 4.19 mum; 76 mA; CW lasers; PbEuSeTe-PbTe; SCBH diode laser; continuous wave operating temperature; emission power; lead-chalcogenide diode lasers; low threshold currents; molecular beam epitaxy; molecular beam epitaxy-grown; separate confinement buried heterostructure PbEuSeTe-PbTe diode lasers; temperature tuning range; threshold current; tunable diode lasers; Carrier confinement; Diode lasers; Laser modes; Lead; Molecular beam epitaxial growth; Optical refraction; Optical waveguides; Semiconductor lasers; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
