Title :
Theoretical analysis of an Al0.15Ga0.85As/In 0.15Ga0.85As pseudomorphic HEMT using an ensemble Monte Carlo simulation
Author :
Park, Duke H. ; Brennan, Kevin F.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
The calculations presented include the full details of the two-dimensional electron gas, nonstationary transport effects, real-space transfer, and the effects of the two-dimensional electric field profile. As a test of the accuracy with which the calculations successfully model a real device, the calculated current-voltage characteristic is compared to the experimentally measured data for a comparable device. Excellent agreement is obtained between the theory and experiment. The effect of velocity overshoot and real-space transfer on the device performance is investigated as a function of gate and drain bias. It is found that at under certain gate-bias conditions, real-space transfer into both the AlGaAs and GaAs layers occurs, leading to an enhanced substrate leakage current as well as lowered overall speed of performance
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; Al0.15Ga0.85As-In0.15Ga0.85 As; current-voltage characteristic; drain bias; ensemble Monte Carlo simulation; gate-bias conditions; nonstationary transport effects; overall speed; pseudomorphic HEMT; real-space transfer; substrate leakage current; two-dimensional electric field profile; two-dimensional electron gas; velocity overshoot; Atomic layer deposition; Electron mobility; Gallium arsenide; HEMTs; MESFET integrated circuits; PHEMTs; Photonic band gap; Tail; Testing; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
