Title :
Edge effects in pixelated CdZnTe gamma detectors
Author :
Shor, Asher ; Eisen, Yossi ; Mardor, Israel
Author_Institution :
Soreq Nucl. Res. Center, Yavne, Israel
Abstract :
Edge effects in pixelated CdZnTe detectors occur due to the high dielectric constant of the CdZnTe detector material, and the tendency of the field lines emanating from the "hole" charge carriers to remain within the detector volume. As a result, spectra for edge and corner pixels tend to exhibit a longer low energy tail at the expense of the number of events in the photo-peak. We focus on a thick pixelated CdZnTe detector, where, the detector thickness is comparable to the lateral size. We develop a theoretical Monte-Carlo simulation that well describes the experimentally observed edge effects. We show that when the same detector is embedded in an array of similar detector at the same HV, the edge effects disappear, and the spectral properties the edge and corner pixels improve markedly.
Keywords :
Monte Carlo methods; gamma-ray detection; position sensitive particle detectors; semiconductor counters; CdZnTe detector material; HV potential; Monte-Carlo simulation; corner pixel; detector thickness; detector volume; edge effects; edge pixel; field line emanation; high dielectric constant; hole charge carriers; lateral size; longer low energy tail; photopeak; pixelated CdZnTe gamma detector; solid-state gamma detector; spectral properties; Charge carriers; Dielectric materials; Electrodes; Gamma ray detection; Gamma ray detectors; High-K gate dielectrics; Sensor arrays; Signal processing; Solid state circuits; Tail; CdZnTe detectors; pixelated detectors; solid-state gamma detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.835607