Title :
Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulators
Author :
Ido, T. ; Sano, H. ; Tanaka, S. ; Inoue, H.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Frequency-domain measurement of carrier escape times in reverse-biased multiple-quantum wells (MQW´s) is proposed and demonstrated. Measurement and analysis of opto-to-electrical (OE) frequency response give the escape times of both electrons and holes with excellent time resolution. Using this technique, we measured escape times in an InGaAs-InAlAs MQW electro-absorption modulator and estimated the carrier density in the wells during optical input. This measurement can clarify the optical saturation effect in optical devices such as MQW electro-absorption modulators.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; electro-optical modulation; electroabsorption; frequency-domain analysis; gallium arsenide; indium compounds; optical saturation; photoconductivity; semiconductor quantum wells; InGaAs-InAlAs; InGaAs-InAlAs MQW electro-absorption modulator; MQW electro-absorption optical modulators; carrier density; carrier escape times; electrons; frequency-domain measurement; holes; optical input; optical saturation effect; opto-to-electrical frequency response; reverse-biased multiple-quantum wells; time resolution; Charge carrier processes; Density measurement; Electron optics; Frequency domain analysis; Frequency measurement; Frequency response; Optical modulation; Optical saturation; Quantum well devices; Time measurement;
Journal_Title :
Photonics Technology Letters, IEEE
