Title :
Forward-bias conduction of Schottky diodes on polysilicon thin films
Author :
Verghese, Simon ; Hauser, John R. ; Wortman, Jimmie J. ; Kerns, Sherra E.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
An analysis of forward I-V characteristics for Al Schottky contacts to polycrystalline thin films is presented. Experimental results for lateral structures with various n- doping levels show the expected twofold exponential characteristics representing a transition from electrode-limited to bulk-limited conduction. At higher doping levels the bulk-limited characteristic is not a perfect exponential. The thermionic emission theory has been modified to include crystallite resistivity between grain boundaries and successfully matches experimental data
Keywords :
Schottky-barrier diodes; aluminium; elemental semiconductors; grain boundaries; silicon; Al-Si; Schottky contacts; Schottky diodes; bulk-limited conduction; crystallite resistivity; forward I-V characteristics; forward-bias conduction; grain boundaries; lateral structures; n- doping levels; polycrystalline thin films; thermionic emission theory; twofold exponential characteristics; Conductivity; Crystallization; Doping; Grain boundaries; Schottky barriers; Schottky diodes; Testing; Thermionic emission; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
