DocumentCode
1139154
Title
Substrate current model for submicrometer MOSFETs based on mean free path analysis
Author
Hwang, Chang G. ; Dutton, R.W.
Author_Institution
Integrated Circuits Lab., Stanford Univ., CA, USA
Volume
36
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
1348
Lastpage
1354
Abstract
The nonequilibrium effects of hot carriers are investigated to analyze avalanche generation for submicrometer MOSFET devices. A simple analytical expression for the impact ionization utilizing the mean free path concept is developed. It is incorporated into a conventional drift-diffusion equation solver (PISCES) to obtain the substrate current in submicrometer MOSFET devices. The transconductance for high drain bias and breakdown conditions are analyzed based on the proposed impact ionization model
Keywords
hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; PISCES; avalanche generation; breakdown conditions; drift-diffusion equation solver; high drain bias; hot carriers; impact ionization; mean free path analysis; nonequilibrium effects; submicrometer MOSFETs; transconductance; Analytical models; Charge carrier processes; Current density; Electrons; Impact ionization; Laboratories; MOSFETs; Scattering; Substrates; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.30940
Filename
30940
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