Diamond Heat Spreader Layer for High-Power Thin-GaN Light-Emitting Diodes

Author

Chen, Po Han ; Lin, Ching Liang ; Liu, Y.K. ; Chung, Te Yuan ; Liu, Cheng-Yi

Author_Institution

Nat. Central Univ., Jhongli

Volume

20

Issue

10

fYear

2008

fDate

5/15/2008 12:00:00 AM

Firstpage

845

Lastpage

847

Abstract

A diamond-coating layer is studied as a heat spreading layer for a thin-GaN light-emitting diode (LED) chip. Our results show that this diamond layer can effectively spread the heat and improve the temperature uniformity of a thin-GaN LED chip, which enhances the heat dissipation efficiency down to the heat sink. With the diamond heat spreading layer, the junction temperature of the thin-GaN LED was reduced by 20 C at 1-A current input and the uniformity of the temperature distribution is also greatly improved.

Keywords

III-V semiconductors; diamond; gallium compounds; heat sinks; light emitting diodes; temperature distribution; wide band gap semiconductors; GaN; LED chip; diamond-coating layer; heat dissipation efficiency; heat sink; heat spreader layer; junction temperature; light-emitting diode chip; temperature distribution; Chemical vapor deposition; Cities and towns; Gallium nitride; Heat sinks; Light emitting diodes; Optical materials; Proximity effect; Temperature distribution; Thermal conductivity; Wafer bonding; Diamond; heat spreading layer; light-emitting diodes (LEDs); thin-GaN light-emitting diode (LED);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.921826

Filename

4494582