DocumentCode :
113931
Title :
Energy band gap characteristics of GaP1−xBix calculated using Quantum Dielectric Theory and Valence Band Anticrossing model
Author :
Samajdar, D.P. ; Dhar, Sudipta
Author_Institution :
Dept. of Electron. & Commun., Heritage Inst. of Technol., Kolkata, India
fYear :
2014
fDate :
16-17 Jan. 2014
Firstpage :
1
Lastpage :
4
Abstract :
Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.
Keywords :
III-V semiconductors; energy gap; gallium compounds; phosphorus compounds; valence bands; wide band gap semiconductors; GaP1-xBix; QDT; VBAC interaction; band structure; energy band gap characteristics; mathematical models; quantum dielectric theory; ternary alloy; valence band anticrossing interaction; Bismuth; Lattices; Photonic band gap; Direct energy gap; band offset; covalent radius; light hole/heavy hole; spin-orbit splitting energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4799-3982-4
Type :
conf
DOI :
10.1109/ICECI.2014.6767363
Filename :
6767363
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=113931
بازگشت