Application of IGCT in High-Power Rectifiers

This paper investigates the possibility of applying an integrated gate commutated thyristor (IGCT) into high-current high-power rectifier systems. The optimal power converter topology that fully utilizes the functionality of the IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and three-level step-down dc/dc converter. As compared to two-level operation, half the input dc voltage and twice the effective switching frequency of three-level operation can provide a wider operation range of continuous conduction mode resulting in a higher average output current of less ripple size than two-level case. A laboratory prototype of a 5-kA 3.1-MW rectifier has been simulated and tested to confirm the feasibility of the IGCT in the proposed power converter topology. The proposed solution generates a relatively smooth output dc current with less contents of high-frequency harmonics, thereby avoiding the high-frequency harmonic-related problems found in insulated-gate-bipolar-transistors-based high-current rectifiers. The IGCT would play a significant role to improve the cost-effective performance and reliability in low- and medium-ranged high-current high-power rectifier systems.