A novel etching technology with reactive ion etching system for GaAs via-hole etching applications

Author

Lin, C.S. ; Fang, Y.K. ; Ting, S.-F. ; Wu, C.L. ; Chang, C.S.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan

Volume

16

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

57

Lastpage

59

Abstract

A via-hole dry etching technique has been studied with manipulating RF power and gas pressures in a reactive ion etching system. These parameters were optimized into a two-step recipe. With the recipe, a sloped and smooth profile can be obtained for monolithic microwave integrated circuits and power FET applications. With the two-step etching recipe, greater than 25:1 selectivity between GaAs/photoresist and less than 10% etching deviation were obtained. Furthermore, the slope angle from the horizontal surface is less than 80°.

Keywords

III-V semiconductors; field effect MMIC; gallium arsenide; microwave field effect transistors; microwave power transistors; photoresists; power field effect transistors; sputter etching; GaAs; etching deviation; etching technology; gas pressures; horizontal surface; manipulating RF power; microwave power FET; monolithic microwave integrated circuits; photoresist; reactive ion etching system; slope angle; two-step recipe; via-hole etching applications; Application specific integrated circuits; Dry etching; FET integrated circuits; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; Radio frequency;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2002.807738

Filename

1177330