Modeling the influence of arsenic autodoping on the sheet resistance of epitaxial silicon films and its application to statistical process control (SPC)

Author

Torres, Victor M.

Author_Institution

Nat. Semicond. Corp., Arlington, TX, USA

Volume

16

Issue

1

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

68

Lastpage

75

Abstract

An epitaxial layer sheet resistance monitoring procedure has been developed to overcome the convolution between intentional epilayer doping and arsenic autodoping for multiwafer reactors. The procedure models the epilayer as an intentionally phosphorous-doped region plus an arsenic autodoped region by approximating the epilayer as two resistors in parallel. The resulting sheet resistance SPC monitoring procedure is sensitive to shifts in epilayer carrier concentration as well as arsenic autodoping induced by product lots.

Keywords

arsenic; carrier density; elemental semiconductors; process monitoring; semiconductor doping; semiconductor epitaxial layers; semiconductor process modelling; silicon; statistical process control; Si:As; autodoping; epilayer carrier concentration; epitaxial layer; multiwafer reactors; product lots; resistance monitoring procedure; sheet resistance; statistical process control; Convolution; Doping; Epitaxial layers; Inductors; Monitoring; Process control; Resistors; Semiconductor films; Semiconductor process modeling; Silicon;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.808476

Filename

1177332