Title :
Thermal effects in p-channel MOSFETs at low temperatures
Author_Institution :
IBM Corp., Essex Junction, VT, USA
fDate :
8/1/1989 12:00:00 AM
Abstract :
Thermal effects due to device self-heating in p-channel enhancement MOSFETs operated at cryogenic temperatures are discussed. Device heating is observed through drain-current transients, and the drain current is used to monitor heating. Comparisons are made with earlier results for n-channel devices. Some implications for low-temperature CMOS operation are considered
Keywords :
insulated gate field effect transistors; low-temperature techniques; semiconductor device testing; transients; cryogenic temperatures; drain-current transients; low-temperature CMOS operation; p-channel enhancement MOSFETs; self-heating; Cryogenics; Current measurement; Heating; Hysteresis; MOSFETs; Monitoring; Neodymium; Plastic packaging; Semiconductor devices; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
