Location and origin of traps in InGaP-GaAs by GR noise measurement and simulation

Author

Nallatamby, Jean-Christophe ; Al-Hajjar, Ahmad ; Laurent, Sylvain ; Prigent, Michel

Author_Institution

XLIM C2S2, Univ. of Limoges, Brive, France

fYear

2014

fDate

15-17 Dec. 2014

Firstpage

304

Lastpage

307

Abstract

A thorough approach to the location and origin of traps generated in InGaP/GaAs heterojunction bipolar transistors (HBT) by low frequency noise characterization and reliable physics-based simulation is discussed. Physics-based simulation together with the low frequency equivalent short-circuit current noise sources (Sib, Sic) experimental results reveal an electron trap located at the 5-InGaP/GaAs heterointerface and at the InGaP/nitride interface. For the first time, power spectral density (PSD) curves of (Sib, Sic) in the 100 Hz to 1 MHz frequency range for current densities up to 20 kA/cm² are demonstrated and are in agreement with those obtained from physics-based simulation.

Keywords

III-V semiconductors; current density; electron traps; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; noise measurement; semiconductor device measurement; semiconductor device noise; short-circuit currents; silicon compounds; GR noise measurement; InGaP-GaAs-SiB; InGaP-GaAs-SiC; current density; electron trap; frequency 100 MHz to 1 MHz; heterojunction bipolar transistors; low frequency equivalent short-circuit current noise sources; low frequency noise characterization; physics-based simulation; power spectral density; Current measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Noise; Noise measurement; Semiconductor device measurement; Temperature measurement; GR noise; InGaP-GaAs HBT; Noise characterization; TCAD Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and RF Conference (IMaRC), 2014 IEEE International

Conference_Location

Bangalore

Type

conf

DOI

10.1109/IMaRC.2014.7039047

Filename

7039047