DocumentCode :
113948
Title :
A parameterized cell design for high-Q, variable width and spacing spiral inductors
Author :
Manikandan, R.R. ; Vanukuru, Venkata Narayana Rao ; Chakravorty, Anjan ; Amrutur, Bharadwaj
Author_Institution :
ECE Dept., IISC Bangalore, Bangalore, India
fYear :
2014
fDate :
15-17 Dec. 2014
Firstpage :
312
Lastpage :
315
Abstract :
The on-chip planar spiral inductors having variable width (W) and spacing (S) across their turns are known to exhibit higher quality factors (Q). In this paper, we present an efficient parameterized cell (pcell) design in cadence using SKILL scripts for automatic layout generation of these complex, high-Q, variable W&S spiral inductors comprising of single ended and symmetric structures with rectangular, hexagonal, octagonal and circular spirals. Electromagnetic simulations are performed on the inductor layouts generated using the developed pcells. The constant W&S and variable W&S spiral inductor structures are fabricated in a 0.18 μm silicon on insulator process. Measurements show ~25% improvement in the quality factor of variable W%S spiral inductors compared to their constant W&S counterparts and also validates the proper operation of the developed inductor parameterized cells. The presented variable W&S inductor pcell significantly reduces the layout design time of RF circuit designers and also helps in the design automation of these complex inductor structures to boost their own performance and the RF circuits as well.
Keywords :
elemental semiconductors; inductors; silicon; silicon-on-insulator; RF circuits; SKILL script; Si; automatic layout generation; cadence; circular spiral; electromagnetic simulation; hexagonal spiral; octagonal spiral; on-chip spacing planar spiral inductor; parameterized cell design; pcell design; quality factor; rectangular spiral; silicon on insulator process; single ended structure; size 0.18 mum; symmetric structure; Inductors; Layout; Q-factor; Radio frequency; Silicon-on-insulator; Spirals; Substrates; CAD; parameterized-cell; proximity effect; quality factor; silicon on insulator; spiral inductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and RF Conference (IMaRC), 2014 IEEE International
Conference_Location :
Bangalore
Type :
conf
DOI :
10.1109/IMaRC.2014.7039049
Filename :
7039049
Link To Document :
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