Title :
A New Antifuse Cell With Programmable Contact for Advance CMOS Logic Circuits
Author :
Chen, Maybe ; Huang, Chia-En ; Tseng, Yuan-Heng ; King, Ya-Chin ; Lin, Chrong-Jung
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
fDate :
5/1/2008 12:00:00 AM
Abstract :
A new CMOS-process-compatible programmable contact antifuse (PCAF) cell is presented in this letter for advance programmable logic applications. This innovative PCAF cell adapts an oxide layer formed by the etched resist-protection oxide layer under a properly designed contact region, which results in a highly scalable one-time-programmable solution for advance logic circuits. A subcircuit model describing the - characteristics of the antifuse cell before and after program is developed to facilitate the future PCAF memory macro design.
Keywords :
CMOS logic circuits; advance CMOS logic circuits; antifuse cell; programmable contact; CMOS logic circuits; CMOS process; CMOS technology; Contacts; Dielectric breakdown; Etching; Logic circuits; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Antifuse; dielectric breakdown; gate oxide; nonvolatile memories (NVMs); one-time programmable (OTP); oxide breakdown; resist-protection oxide (RPO);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.920754
