Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors

Author

Tousley, Bradford C. ; Davids, Neil ; Sayles, Andre H. ; Paolella, Arthur ; Cooke, Paul ; Lemoune, Mary L. ; Moerkirk, Robert P. ; Nabet, Bahram

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., US Mil. Acad., West Point, NY, USA

Volume

7

Issue

12

fYear

1995

Firstpage

1483

Lastpage

1485

Abstract

In this letter, we report the design, fabrication, parametric testing, and analysis of a intermediate growth temperature (IGT) GaAs MSM photodetectors. The broad-area, ultrafast photodetector displays linear and nonlinear photocurrent generation characteristics as a function of applied bias and optical power. The photocurrent/dark current ratio 7/spl times/10/sup 3/ is significantly larger than normal growth temperature or low growth temperature 200/spl deg/C based GaAs MSM´s. The optical responsivity of 130 mV/pJ Is the highest ever reported for similar ultrafast MSM photodetectors. This device is uniquely suited for high-speed, high-photocurrent applications, such as optoelectronic trigger sources for phased-array antenna systems.

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; high-speed optical techniques; integrated optics; metal-semiconductor-metal structures; optical design techniques; optical fabrication; optical testing; photoconductivity; photodetectors; semiconductor growth; 200 C; GaAs; GaAs MSM photodetectors; applied bias; broad-bandwidth photodetectors; high-photocurrent applications; high-responsivity; intermediate growth temperature; linear photocurrent generation characteristics; nonlinear photocurrent generation characteristics; optical power; optical responsivity; optoelectronic trigger sources; parametric testing; phased-array antenna systems; photocurrent/dark current ratio; ultrafast photodetector; Gallium arsenide; High speed optical techniques; Nonlinear optical devices; Nonlinear optics; Optical device fabrication; Photoconductivity; Photodetectors; Temperature; Testing; Ultrafast optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.477290

Filename

477290