Performance comparison on D.C properties of heterostructure DDR IMPATT with conventional diode

Author

Deyasi, Arpan ; Mukherjee, Kingshuk ; Bhattacharyya, Souvik

Author_Institution

Dept. of Electron. & Comm. Eng., RCC Inst. of Inf. Technol., Kolkata, India

fYear

2014

fDate

16-17 Jan. 2014

Firstpage

1

Lastpage

4

Abstract

In this paper, electric field profile, normalized current density, breakdown voltage and conversion efficiency of Si/Si0.9Ge0.1 DDR IMPATT are numerically computed and results are compared with Si DDR diode for optimized input bias current. Double iterative technique is used for computational purpose which is based on simultaneous numerical solution of Poisson´s equation, carrier diffusion equation and continuity equation in addition with the effect of mobile space charge. Electric field and normalized current profiles are obtained subject to the appropriate boundary conditions. Breakdown voltage and conversion efficiency are calculated for optimized input bias current density. Doping concentration is so chosen to obtain punch-through effect. Results are useful for small-signal analysis at microwave and millimeterwave frequency range.

Keywords

IMPATT diodes; iterative methods; Poisson equation; breakdown voltage; carrier diffusion equation; continuity equation; conventional diode; conversion efficiency; doping concentration; double iterative technique; electric field profile; heterostructure DDR IMPATT; input bias current density; microwave frequency range; millimeterwave frequency range; mobile space charge; normalized current density; normalized current profiles; small signal analysis; Electric breakdown; Equations; Mathematical model; Microwave propagation; Performance evaluation; Radar; Silicon; Double drift region; Double iterative method; Heterostructure IMPATT; Multiplication factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4799-3982-4

Type

conf

DOI

10.1109/ICECI.2014.6767375

Filename

6767375