Relaxation oscillations in quasi-single-mode semiconductor lasers

Author

Zaibel, R. ; Chernobrod, B.M. ; Prior, Yehiam

Author_Institution

Dept. of Chem. Phys., Weizmann Inst. of Sci., Rehovot, Israel

Volume

30

Issue

9

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

2081

Lastpage

2086

Abstract

The intensity-relaxation-oscillation (RO) and damping rates, and the laser linewidth are measured and analyzed for a semiconductor laser under quasi-single-mode conditions. The RO frequency and the laser-linewidth dependence on laser power are measured, and are described well by the Henry single-mode theory. The relaxation-oscillation damping rate, however, shows a significant deviation from the expected power dependence, and is found to depend on the effective number of idle modes, and the fraction of energy in such modes. The observation is explained very well by a generalized quasi-single-mode theory that accounts for the collective contribution of the idle modes

Keywords

damping; laser modes; laser theory; semiconductor lasers; spectral line breadth; Henry single-mode theory; damping rates; idle modes; intensity-relaxation-oscillation; laser linewidth; quasi-single-mode theory; semiconductor lasers; Damping; Frequency measurement; Laser modes; Laser noise; Laser theory; Noise measurement; Power lasers; Power measurement; Semiconductor device noise; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.309868

Filename

309868