Title :
Analysis of an InGaAsP/InP twin-overlayed-waveguide switch
Author :
Maciejko, R. ; Champagne, A. ; Reid, B. ; Mani, H.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada
fDate :
9/1/1994 12:00:00 AM
Abstract :
This paper examines the design considerations for a device combining vertical stacking of waveguides, carrier injection, and codirectional switching in InGaAsP/InP materials and demonstrates that many favorable features can be found in such a device, namely, an interaction length of about 408 μm, switching with about 1 V with an injection current density of the order of 108-988 A/cm2 and a channel isolation up to 25 db with an absorption loss of under 1 dB. We base our argument on a self-consistent numerical calculation
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical losses; optical switches; optical waveguides; 1 V; 1 dB; 400 micron; InGaAsP-InP; InGaAsP/InP twin-overlayed-waveguide switch; absorption loss; carrier injection; channel isolation; codirectional switching; design; injection current density; interaction length; self-consistent numerical calculation; vertical stacking; Absorption; Current density; Epitaxial layers; Geometrical optics; Indium phosphide; Optical materials; Optical refraction; Optical waveguides; Stacking; Switches;
Journal_Title :
Quantum Electronics, IEEE Journal of
