DocumentCode
1139828
Title
Influence of electron energy on the characteristics of electron-beam-pumped semiconductor lasers
Author
Bogdankevich, O.V. ; Kalendin, V.V. ; Mestvirishvili, A.N.
Author_Institution
Lebedev Physical Institute, Moscow, USSR
Volume
6
Issue
6
fYear
1970
fDate
6/1/1970 12:00:00 AM
Firstpage
389
Lastpage
392
Abstract
The influence of electron energy on the characteristics of electron-beam-pumped GaAs lasers is studied experimentally. Increases in the electron energy lead to increases in output power and decreases in beam divergence. Above radiation-damage threshold, a degradation of the laser output with time is observed due to bulk defects created by the beam. These defects are partially self-annealing if radiation is stopped.
Keywords
Electron beams; Energy measurement; Fingers; Gallium arsenide; Heating; Laser beams; Mirrors; Pulse measurements; Pump lasers; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1970.1076465
Filename
1076465
Link To Document