DocumentCode :
1139918
Title :
Influence of reflectivity on the external quantum efficiency of GaAs injection lasers
Author :
Ulbrich, R. ; Pilkuhn, M.H.
Author_Institution :
Universität Frankfurt, Germany
Volume :
6
Issue :
6
fYear :
1970
fDate :
6/1/1970 12:00:00 AM
Firstpage :
314
Lastpage :
316
Abstract :
The differential external quantum efficiency ηext of Fabry-Perot-type GaAs injection lasers has been measured as a function of the mean reflectivity 
. By evaporation of antireflective films, has been varied between 0.25 and 0.06. The observed increase of ηext with decreasing is interpreted in terms of a simple model. Values for the optical losses α, the gain factor β, and the internal quantum efficiency at 77°K are obtained for individual diodes.
. By evaporation of antireflective films, has been varied between 0.25 and 0.06. The observed increase of η is interpreted in terms of a simple model. Values for the optical losses α, the gain factor β, and the internal quantum efficiency at 77°K are obtained for individual diodes.Keywords :
Gallium arsenide; Laser modes; Mirrors; Monitoring; Optical films; Optical scattering; Reflectivity; Semiconductor diodes; Semiconductor lasers; Shape;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1970.1076474
Filename :
1076474
Link To Document :
