Title :
Low-energy neutron sensitivity of recent generation SRAMs
Author :
Armani, J.M. ; Simon, G. ; Poirot, P.
Author_Institution :
Commissariat a l´´Energie Atomique, Gif sur Yvette, France
Abstract :
This experimental study investigated the sensitivity of 0.22 to 0.13 μm CMOS-based SRAMs to single-event upsets (SEUs) induced by thermal and fission neutrons (energies below 6 MeV). Results showed that both supply voltage and type of component model can have significant impact.
Keywords :
CMOS memory circuits; SRAM chips; fission reactor instrumentation; fission reactor monitoring; neutron effects; neutron flux; CMOS-based SRAMs; SEU; boron; component model; fast neutrons; fission neutrons; low-energy neutron sensitivity; memory cross sections; neutron fluence; neutron flux; single-event upsets; supply voltage impact; thermal neutrons; Aerospace electronics; CMOS technology; Circuits; Inductors; Neutrons; Random access memory; Single event transient; Single event upset; Testing; Voltage; Boron; CMOS process; SEU; SRAM; cross section; fast neutrons; fluence; flux; single-event upset; thermal neutrons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.835080
