DocumentCode
1139938
Title
Low-energy neutron sensitivity of recent generation SRAMs
Author
Armani, J.M. ; Simon, G. ; Poirot, P.
Author_Institution
Commissariat a l´´Energie Atomique, Gif sur Yvette, France
Volume
51
Issue
5
fYear
2004
Firstpage
2811
Lastpage
2816
Abstract
This experimental study investigated the sensitivity of 0.22 to 0.13 μm CMOS-based SRAMs to single-event upsets (SEUs) induced by thermal and fission neutrons (energies below 6 MeV). Results showed that both supply voltage and type of component model can have significant impact.
Keywords
CMOS memory circuits; SRAM chips; fission reactor instrumentation; fission reactor monitoring; neutron effects; neutron flux; CMOS-based SRAMs; SEU; boron; component model; fast neutrons; fission neutrons; low-energy neutron sensitivity; memory cross sections; neutron fluence; neutron flux; single-event upsets; supply voltage impact; thermal neutrons; Aerospace electronics; CMOS technology; Circuits; Inductors; Neutrons; Random access memory; Single event transient; Single event upset; Testing; Voltage; Boron; CMOS process; SEU; SRAM; cross section; fast neutrons; fluence; flux; single-event upset; thermal neutrons;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.835080
Filename
1344422
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