• DocumentCode
    1139940
  • Title

    Dual InGaAs Photodiodes Having High Phase Linearity for Precise Timing Applications

  • Author

    Joshi, Abhay ; Datta, Shubhashish

  • Author_Institution
    Discovery Semicond., Ewing, NJ, USA
  • Volume
    21
  • Issue
    19
  • fYear
    2009
  • Firstpage
    1360
  • Lastpage
    1362
  • Abstract
    We report highly linear InGaAs p-i-n dual photodiodes having a power-to-phase conversion factor of < 3.2 rad/W up to 1.5-V peak radio-frequency amplitude. These matched photodiodes, each having a 3-dB bandwidth of 22 GHz, demonstrate nearly identical performance leading to a differential power-to-phase conversion factor of < 1.5 rad/W.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; p-i-n photodiodes; InGaAs; bandwidth 22 GHz; high phase linearity; p-i-n dual photodiodes; power-to-phase conversion factor; precise timing; radio-frequency amplitude; Nonlinearities; phase noise; photodiodes;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2026632
  • Filename
    5166513