Title :
Characteristics of bistable CW GaAs junction lasers operating above the delay-transition temperature
Author :
Ripper, José E. ; Paoli, Thomas L. ; Dyment, John C.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
fDate :
6/1/1970 12:00:00 AM
Abstract :
The conditions for bistable operation of CW GaAs junction lasers are developed in terms of the previously published double-acceptor trap theory. The experimental CW operation of such devices is shown to agree well with the theoretical results. In addition the fabrication of these bistable lasers is described and several pulsed experiments are reported that indicate a significant increase in the number of trapping centers in the vicinity of the junction.
Keywords :
Delay effects; Electrons; Gallium arsenide; Laser theory; Optical bistability; Optical losses; Optical saturation; Quantum well lasers; Semiconductor lasers; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1970.1076481
