Switched-current memory circuits for high-precision applications

Author

Guggenbuhl, Walter ; Di, Jiandong ; Goette, Josef

Author_Institution

Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

29

Issue

9

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1108

Lastpage

1116

Abstract

We discuss circuit parameters that limit the precision of basic dynamic current-memory cells. In addition to analyzing current-copying errors caused by the finite output conductances of the current sources and by the clock-feedthrough (CFT) of the feedback switches, we analyze the noise performance of the basic memory cell. To reduce CFT and noise, we propose a novel circuit based on Miller capacitance-enhancement. Measurement results of memory cells integrated in a 1-μm CMOS process confirm the theoretical findings; with our CFT and noise reduction technique based on Miller enhanced capacitance and dummy switches, we achieve a dynamic range of 11 b at clock frequencies greater than 100 kHz

Keywords

CMOS integrated circuits; analogue processing circuits; analogue storage; errors; linear integrated circuits; noise; switched networks; 1 micron; 100 kHz; CMOS process; Miller capacitance-enhancement; circuit parameters; clock-feedthrough; current sources; current-copying errors; dummy switches; dynamic current-memory cells; feedback switches; finite output conductances; high-precision applications; noise performance; noise reduction technique; switched-current memory circuits; Capacitance measurement; Clocks; Error analysis; Frequency measurement; Noise measurement; Noise reduction; Output feedback; Performance analysis; Switches; Switching circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.309907

Filename

309907