DocumentCode
114005
Title
Analysis of leakage feedback technique
Author
Lorenzo, Rohit ; Chaudhury, Santanu
Author_Institution
Electr. Eng., NIT Silchar, Silchar, India
fYear
2014
fDate
16-17 Jan. 2014
Firstpage
1
Lastpage
4
Abstract
Leakage power consumption has become serious concern for circuit designers. It is expected that leakage power will dominate the total power dissipation in future VLSI circuits. We here propose a new design named “NMOS leakage feedback” which reduces leakage current while saving exact logic state. The circuit technique includes addition of NMOS helper transistors to both pull-up and pull-down paths in order to reduce leakage current without affecting the other parameters of the circuit. Based on simulation with inverter chain using 32nm Berkeley predictive technology model, NMOS leakage feedback approach achieves less area, power and delay over leakage feedback approaches with proper W/L ratio.
Keywords
CMOS logic circuits; circuit feedback; integrated circuit design; leakage currents; Berkeley predictive technology model; NMOS helper transistor; NMOS leakage feedback; VLSI circuits; circuit designer; exact logic state; inverter chain; leakage current reduction; leakage feedback technique; leakage power consumption; pull-down path; pull-up path; size 32 nm; Delays; Integrated circuit modeling; Leakage currents; MOS devices; Switching circuits; Threshold voltage; Transistors; leakage power dissipation; sleep transistor; sub threshold current and transistor stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on
Conference_Location
Kolkata
Print_ISBN
978-1-4799-3982-4
Type
conf
DOI
10.1109/ICECI.2014.6767386
Filename
6767386
Link To Document