• DocumentCode
    114005
  • Title

    Analysis of leakage feedback technique

  • Author

    Lorenzo, Rohit ; Chaudhury, Santanu

  • Author_Institution
    Electr. Eng., NIT Silchar, Silchar, India
  • fYear
    2014
  • fDate
    16-17 Jan. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Leakage power consumption has become serious concern for circuit designers. It is expected that leakage power will dominate the total power dissipation in future VLSI circuits. We here propose a new design named “NMOS leakage feedback” which reduces leakage current while saving exact logic state. The circuit technique includes addition of NMOS helper transistors to both pull-up and pull-down paths in order to reduce leakage current without affecting the other parameters of the circuit. Based on simulation with inverter chain using 32nm Berkeley predictive technology model, NMOS leakage feedback approach achieves less area, power and delay over leakage feedback approaches with proper W/L ratio.
  • Keywords
    CMOS logic circuits; circuit feedback; integrated circuit design; leakage currents; Berkeley predictive technology model; NMOS helper transistor; NMOS leakage feedback; VLSI circuits; circuit designer; exact logic state; inverter chain; leakage current reduction; leakage feedback technique; leakage power consumption; pull-down path; pull-up path; size 32 nm; Delays; Integrated circuit modeling; Leakage currents; MOS devices; Switching circuits; Threshold voltage; Transistors; leakage power dissipation; sleep transistor; sub threshold current and transistor stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4799-3982-4
  • Type

    conf

  • DOI
    10.1109/ICECI.2014.6767386
  • Filename
    6767386