Title :
Performance of broad-band microwave-biased extrinsic photoconductive detectors at 10.6 µ
Author :
Sun, C. ; Walsh, T.E.
Author_Institution :
RCA Electronic Components, David Sarnoff Research Center, Princeton, NJ, USA
fDate :
7/1/1970 12:00:00 AM
Abstract :
An analysis of the photoconductive gain-bandwidth product and SNR is presented, which allows a comparison of microwave-biased and dc-biased extrinsic detectors. The results of an experimental comparison using mercury-doped germanium at 10.6 μ are described. For equal bandwidth of 70 MHz, the measured gain and detectivity were better by a factor of 35 for microwave biasing compared to dc biasing.
Keywords :
Bandwidth; Capacitance; Conductors; Germanium; Impedance; Infrared detectors; Microwave amplifiers; Photoconducting materials; Photoconductivity; Sun;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1970.1076502
