A study of low-bias photocurrent gradient of avalanche photodiodes

Author

Wang, Shuling ; Sidhu, Rubin ; Karve, Gauri ; Ma, Feng ; Li, Xiaowei ; Guang Zheng, Xiao ; Hurst, J.B. ; Sun, Xiaoguang ; Li, Ning ; Holmes, Archie L., Jr. ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA

Volume

49

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2107

Lastpage

2113

Abstract

Presents a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of photocurrent as a function of bias voltage; the "slope" of this linear current-voltage (I-V) curve has been examined under different illumination conditions, fabrication procedures and growth conditions. The observed characteristics are explained in terms of the extension of the depletion region edge toward the surface. An analytical model, based on minority drift-diffusion and current continuity equations, provides good fits to the experimental results for small (∼0.1 μm) "effective diffusion lengths.".

Keywords

avalanche photodiodes; minority carriers; optical receivers; semiconductor device models; 0.1 micron; avalanche photodiodes; current continuity equations; depletion region edge; fabrication procedures; growth conditions; illumination conditions; linear current-voltage curve; low-bias photocurrent gradient; minority drift-diffusion; reverse bias; unity gain; Analytical models; Avalanche photodiodes; Equations; Fabrication; Gallium arsenide; Lighting; Performance gain; Photoconductivity; Sun; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.805233

Filename

1177957