Title :
A study of low-bias photocurrent gradient of avalanche photodiodes
Author :
Wang, Shuling ; Sidhu, Rubin ; Karve, Gauri ; Ma, Feng ; Li, Xiaowei ; Guang Zheng, Xiao ; Hurst, J.B. ; Sun, Xiaoguang ; Li, Ning ; Holmes, Archie L., Jr. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
Presents a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of photocurrent as a function of bias voltage; the "slope" of this linear current-voltage (I-V) curve has been examined under different illumination conditions, fabrication procedures and growth conditions. The observed characteristics are explained in terms of the extension of the depletion region edge toward the surface. An analytical model, based on minority drift-diffusion and current continuity equations, provides good fits to the experimental results for small (∼0.1 μm) "effective diffusion lengths.".
Keywords :
avalanche photodiodes; minority carriers; optical receivers; semiconductor device models; 0.1 micron; avalanche photodiodes; current continuity equations; depletion region edge; fabrication procedures; growth conditions; illumination conditions; linear current-voltage curve; low-bias photocurrent gradient; minority drift-diffusion; reverse bias; unity gain; Analytical models; Avalanche photodiodes; Equations; Fabrication; Gallium arsenide; Lighting; Performance gain; Photoconductivity; Sun; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.805233
