DocumentCode :
1140255
Title :
On the Potential of SiGe HBTs for Extreme Environment Electronics
Author :
Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
93
Issue :
9
fYear :
2005
Firstpage :
1559
Lastpage :
1582
Abstract :
"Extreme environments" represents an important niche market for electronics and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military, specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation at very high temperatures (e.g., to 200°C or even 300°C), and operation in a radiation-rich environment (e.g., space). We argue that the unique bandgap-engineered features of silicon-germanium heterojunction bipolar transistors offer great potential to simultaneously satisfy all three extreme environment applications, potentially with little or no process modification, ultimately providing compelling cost advantages at the IC and system level.
Keywords :
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; SiGe; bandgap-engineered features; cryogenic temperatures; extreme environment electronics; heterojunction bipolar transistors; radiation-rich environment; very high temperatures operation; very low temperatures operation; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Consumer electronics; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature; Cryogenic temperatures; extreme environments; high temperatures; radiation; silicon–germanium (SiGe); silicon–germanium heterojunction bipolar transistor (SiGe HBT);
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2005.852225
Filename :
1495906
Link To Document :
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