Title :
Highly reliable ferroelectric memories using BLT thin films and robust integration schemes
Author :
Yang, B. ; Kang, Y.M. ; Lee, S.S. ; Noh, K.H. ; Lee, S.W. ; Kim, N.K. ; Kweon, S.Y. ; Yeom, S.J. ; Park, Y.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Kumoh Nat. Inst. of Technol., Kyongsangbuk-Do, South Korea
Abstract :
We report on highly reliable characteristics of 1-Mb ferroelectric memories based on 0.35-μm CMOS technology ensuring ten-year retention and imprint at 175/spl deg/C, which have been successfully developed for the first time. This excellent reliability resulted from newly developed [Bi/sub 1-x/La/sub x/]4Ti3O/sub 12/ (BLT) ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen.
Keywords :
CMOS memory circuits; bismuth compounds; ferroelectric storage; ferroelectric thin films; high-temperature electronics; integrated circuit reliability; lanthanum compounds; 0.35 micron; 1 Mbit; 175 degC; BLT thin film; CMOS technology; [BiLa]/sub 4/Ti/sub 3/O/sub 12/; ferroelectric memory; high temperature reliability; impurities; process integration; Bismuth; CMOS technology; Degradation; Ferroelectric films; Ferroelectric materials; Impurities; Moisture; Robustness; Temperature; Transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.806299
