DocumentCode
1140436
Title
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques
Author
Wu, Ernest Y. ; Vollertsen, R.-P.
Author_Institution
IBM Microelectron. Div., Essex Junction, VT, USA
Volume
49
Issue
12
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
2131
Lastpage
2140
Abstract
Critically examined several important aspects concerning the experimental determination of Weibull shape factors (slopes). Statistical characteristics of breakdown distribution such as area scaling property and the extreme-value distribution are reviewed. We discuss the experimental measurement methodology of time-to-breakdown (TBD) or charge-to-charge (QBD) distributions with the emphasis on the accuracy. The influence of sample numbers on the estimation of Weibull distribution parameters such as characteristic TBD and Weibull slopes are investigated in the context of confidence limits. Some examples of the measurement fallacy on Weibull slopes are given. Three different experimental techniques to measure Weibull slopes are described and compared in terms of their advantages and disadvantages. Finally, we will give a comparison of these three methods. Having established these fundamental aspects of the Weibull slope measurements, we will present our extensive experimental data on thickness, voltage, temperature, and polarity dependence of Weibull slopes in part II.
Keywords
MIS devices; Weibull distribution; dielectric thin films; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; MOS devices; Weibull shape factor; Weibull slopes; area scaling property; charge-to-charge distributions; confidence limits; dielectric films; extreme-value distribution; intrinsic breakdown; polarity dependence; slopes; time-to-breakdown; Current measurement; Dielectric breakdown; Dielectric films; Dielectric measurements; Electric breakdown; Q measurement; Shape; Thickness measurement; Voltage; Weibull distribution;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2002.805612
Filename
1177977
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